Home Green Energy IIT-Indore receives patent for simple, cost-effective power devices

IIT-Indore receives patent for simple, cost-effective power devices

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IIT-Indore receives patent for simple, cost-effective power devices

For next-generation electric cars and 5G and 6G communication, the Indian Institute of Technology (IIT) Indore has been received two patents. One is for cost-effective power devices that can be used in electric cars, and the other is for fingerprint biometrics that can help prevent theft. HEMT will be worth $2.8 billion around the world by 2026, according to a report.

Key Highlight:

  • Two patents for cost-effective power devices for next-generation electric cars and 5G/6G communication and a fingerprint capture method for anti-theft fingerprint biometry were awarded to the Indian Institute of Technology (IIT) Indore.
  • For next-generation electric vehicles, 5G/6G connectivity, and space technology, the institution say the recently patented fabrication technique will revolutionize the area. It will also help India’s Make in India become self-reliant in power transistor technology.
  • The institute added that the global market for HEMT is estimated to reach $2.8 billion by 2026 by rising at a CAGR of 15.2 percent from 2021 to 2026.
  • With a high two-dimensional electron gas density producing Zinc Oxide heterostructure, the Patent Office of India has issued a patent that is currently in the “Tech Marketing Phase” of commercialization.
  • A fingerprint acquisition system for anti-theft fingerprint biometry and method were also given to IIT-I.

India’s Indian Institute of Technology, Indore, has been given two patents. They’re both for cost-effective power devices for electric cars and 5G and 6G communication and a fingerprint acquisition system for anti-theft fingerprint biometrics.

The fabrication method that was recently patented will change the field of High Electron Mobility Transistor (HEMTS)-based power systems for electric cars, 5G and 6G communication, and space technology, the institute said. It will also help India’s Make in India to become self-sufficient in power transistor technology.

According to the institute, the global market will reach $2.8 billion by 2026. This is because it will grow at a rate of 15.2% between 2021 and 2026, the institute said. With the rise of electric cars, 5G/6G communication, and space missions in India, “an indigenous development in technology is promising to make India self-reliant for power transistor technology.”

Prof. Abhinav Kranti and two Ph.D. students from the Department of Electrical Engineering at IIT Indore came up with this new technology and help from other IIT Indore professors and Ph.D. students. People who study electronics say that in India, the government gives money to businesses that make electronics. This will help boost the demand for high-performance semiconductor materials, and it will also help boost the manufacturing of electronics.

The patent for “A method of making a high two-dimensional electron gas density-yielding Zinc Oxide heterostructure” was granted by the Patent Office, Government of India. It is now in the “Tech Marketing Phase” of the commercialization process. “A fingerprint acquisition system and method for anti-theft Fingerprint biometry.” This is a second patent that lIT-I has. Amit Chatterjee, Vimal Bhatia, and Shashi Prakash are the people who came up with this method. An electrical engineering professor at IITI said, “A fingerprint pattern that is unique to each person is stored in the storage device of the authentication system.”

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